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Thông tin cơ bản
Tiêu đề | CMOS Analog Integrated Circuits Amplifiers, Comparators, Multipliers, Filters, and Oscillators |
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Tác giả | Tertulien Ndjountche |
Trường học | CRC Press Taylor & Francis Group |
Thể loại | book |
Năm xuất bản | 2019 |
Thành phố | Boca Raton |
Định dạng | |
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Số trang | 670 |
Dung lượng | 20,47 MB |
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Ngày đăng: 29/10/2021, 17:31
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Tài liệu tham khảo | Loại | Chi tiết | ||
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3.2 Current and voltage referencesr I rVV T(a)I bVT 2(b) T 1 bV VSS SSDD DDR RIFIGURE 3.14Simple (a) voltage and (b) current references.A simple voltage reference is shown in Figure 3.14(a). It operates with a current level set by the resistor R. The transistor T , whose gate and drain are linked, operates in the saturation region provided that V GS ≥ V T . That is, we haveI r = K(V b − V SS − V T ) 2 (3.85)= V DD − V bR (3.86)where K = (1/2)àC ox (W/L) is the transconductance parameter. The equa- tion for the output voltage can be written asKRV b 2 + [1 − 2KR(V SS + V T )]V b + KR(V SS + V T ) 2 − V DD = 0 (3.87) Because V GS = V b − V SS ≥ V T , the only valid root of this quadratic equation is given byV b = V SS + V T − 1 2KR +v u u t1 KR"V DD − (V SS + V T ) + 1 4KR# | Sách, tạp chí |
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(3.88) The bias voltage, V b , is a function of the resistance; the threshold voltage, V T , of the transistor; and the supply voltages. Thus, the accuracy of the current reference will be affected by the supply-voltage variations and the changes in V T due to the temperature and IC process fluctuations.A current reference based on a simple current is shown in Figure 3.14(b) | Khác | |||
(3.96) where U T = kT /q is the thermal voltage, T is the absolute temperature in Kelvin, k is Boltzmann’s constant, q is the electron charge, and n is the sub- threshold slope factor.A CTAT voltage reference is depicted in Figure 3.15(b). All transistors operate in the saturation region and the threshold voltages are matched. With W 1 /L 1 = W 2 /L 2 = W 3 /L 3 and W 4 /L 4 = 4(W 5 /L 5 ) = 4(W 6 /L 6 ), it can be shown thatV CT AT = V GS 1 + V GS 2 − V GS 3 = V T n (3.97) where V T n is the threshold voltage whose relationship with temperature is given byV T n (T ) = V T n (T 0 ) − α V Tn (T − T 0 ) (3.98) and V T n (T 0 ) is the threshold voltage at the temperature T 0 at which the proportionality constant (or temperature coefficient) α V Tn has been estimated.The sensibility of V CT AT to non-idealities, such as the supply-voltage noise and transistor channel-length modulation [9], is reduced by sizing the transistors T 7 and T 8 to minimize the voltage difference between the nodes a and b | Khác | |||
3.2.1 Supply-voltage independent current and voltage refe- rencesA supply-voltage independent current reference is depicted in Fig- ure 3.16(a) [10]. It is based on two current mirrors interconnected into a closed loop. A resistor R is linked to the source of the transistor T 1 . The requirement, I 1 = I 2 = I r , is met because the p-channel transistors are designed to have the same size. The next equations can be written asT 4 II bpT 2 TTT 1 T 3I 1 I 2T 1T T 4T II bn Tbp5 6T 2 bnT 5 T 6s1s2 Ts3(b) V DD(a) V SS V DDR R3V SSFIGURE 3.16(a) Supply-voltage independent current reference; (b) current reference includ- ing a start-up circuit.V GS1 = V GS2 + RI r (3.99)V GS1 =s 2I rà n C ox (W 1 /L 1 ) + V T 1 (3.100) V GS2 =s 2I rà n C ox (W 2 /L 2 ) + V T 2 (3.101) With the assumption that V T1 = V T2 and (W 1 /L 1 ) = κ(W 2 /L 2 ), the current I r is given byI r = 2 à n C ox (W 1 /L 1 )1 R1 − 1√ κ 2 | Khác | |||
(3.102) The versions of the reference current, I bn and I bp , which are respectively suit- able for the biasing of n- and p-channel transistors, are generated by T 5 and T 6 .The start-up circuit T s1 − T s3 of the reference circuit of Figure 3.16(b) injects a current into one branch during the initial power-on to prevent the occurrence of the zero current state. It is designed so that T s1 will turn off (i.e., V SG < V T ) during normal operation of the current reference.Given the currents I 1 and I 2 , both operating points with the desired cur- | Khác | |||
(3.111) In the case where the carrier mobilities remain constant over the temperature range, the current I r is proportional to the square of the temperature.V REF V DDI rT 1I 27T 1 I r TRT 9 T 8T 6 V DDT 2 T 4T 3V REF T 5I 1 T 2T 4T 3FIGURE 3.19Voltage reference with compensated temperature coefficient.A voltage reference with compensated temperature coefficient [12] is de- picted in Figure 3.19. All transistors operate in the saturation region. The drain current and the gate-source voltage can be written asI D j = K j (V GS j − V T n ) 2 j = 1, 2, 3, 4 (3.112) andV GS j = V T n + s I D jK j (3.113)respectively, where K j = (à n C ox /2)(W j /L j ). Using Kirchhoff’s voltage law, it can be shown thatV REF = V GS 4 + V GS 3 − V GS 2 (3.114) andV GS 3 = V GS 1 (3.115)Assuming that the transistor threshold voltages are matched and substituting (3.113) for j = 1, 3 into (3.115) yieldsI D 3 = W 3 /L 3W 1 /L 1I D 1 (3.116) | Khác | |||
3.2.2.1 Low-voltage bandgap voltage referenceGenerally, the normal operation of conventional bandgap references requires the use of a power supply voltage higher than the resulting reference volt- age. For instance, a 2.5-V supply voltage is needed for the generation of an output voltage of about 1.25 V. To satisfy the requirements for low-voltage applications, the current-mode operation principle, which relies on the combi- nation of current sources with positive and negative temperature coefficients to create a temperature-independent current, can be exploited, as illustrated in Figure 3.22(a) [14]. The resulting current is transferred by a current mirror to a network operating as a current divider, and the output voltage level can be scaled to a given value of the formV REF = R 3R 2 + R 3(V EB3 + R 2 I) (3.130) | Khác | |||
(3.138) where V G0 is the energy-bandgap voltage at zero degree Kelvin, T is the abso- lute temperature in degrees Kelvin, T R is the reference temperature, V BE (T R ) is the base-emitter voltage at the temperature T R , n denotes a temperature1 The temperature coefficient T C can be defined using the difference in the maximum and minimum values of the reference voltage over the entire temperature range, i.e.,T C (ppm/ o C) = 10 6 T max − T minV REF,max − V REF,minV REF, 25 o C!where V REF, 25 o C is the value of the reference voltage at the room temperature, and T maxand T min are, respectively, the maximum and minimum temperatures | Khác | |||
(3.140) Because the voltage across the resistor R 4 is equal to the difference of the base-emitter voltages of Q 2 and Q 3 , the curvature correction current is given byI ′ = V EB 2 − V EB 3R 4 = U TR 4 ln T T R | Khác | |||
(3.144) The curvature compensation will be realized if the following requirement [19]is met:R 4 = R 1 /(η − 1) (3.145)and the value of the ratio R 1 /R 2 should be determined to minimize the drift of V REF due to the linear variation of the temperature. Ideally, the resulting voltage reference is reduced toV REF = R 3 V G0 /R 1 (3.146)However, the output voltage reference, as illustrated in Figure 3.23(b), may not remain constant with respect to the temperature due to component mis- matches and the ignored temperature coefficients of resistors | Khác | |||
3.2.3 Floating-gate voltage reference(c) (b)(a)+ FT 2 FT− 1SST 5 T4 T 6I BT 2 T 3T 1C c V0 V P−+ V0V P V REF−+ V0V P V VREF V i iR 2 R 1V SSV DDFIGURE 3.24Floating-gate voltage reference.A typical bandgap voltage reference, which consists of bipolar transistors combined with either the resistive feedback network of an amplifier or MOS | Khác | |||
3.3 SummaryBasic building blocks necessary for the design of active components such as amplifiers, comparators, and multipliers, were presented. They include current mirrors, voltage, and current references. The accuracy of a current mirror is improved by increasing the output resistance. This objective can be met by using cascode or feedback structures. On the other hand, the techniques that can be used to reduce the dependence of the supply voltage and temperature on the output signal provided by the reference circuit were also reviewed | Khác | |||
1. Improved cascode current mirrorAnalyze each of the improved cascode current mirrors of Figure 3.25 with its respective transistor sizes given in Table 3.1 and show that the minimum output voltage is about 2V DS(sat) .(a) rI r I rV SS I b V DDT 3I b T 1T 6(b) T 6T 5T 2 T 1TV3SST 5T 4 T 2T 4IFIGURE 3.25Circuit diagram of improved cascode current mirrors | Khác |
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