Optical Fiber Telecommunications V B About the Editors Ivan P Kaminow retired from Bell Labs in 1996 after a 42-year career He conducted seminal studies on electrooptic modulators and materials, Raman scattering in ferroelectrics, integrated optics, semiconductor lasers (DBR, ridge-waveguide InGaAsP, and multi-frequency), birefringent optical fibers, and WDM networks Later, he led research on WDM components (EDFAs, AWGs, and fiber Fabry-Perot Filters), and on WDM local and wide area networks He is a member of the National Academy of Engineering and a recipient of the IEEE/OSA John Tyndall, OSA Charles Townes, and IEEE/LEOS Quantum Electronics Awards Since 2004, he has been Adjunct Professor of Electrical Engineering at the University of California, Berkeley Tingye Li retired from AT&T in 1998 after a 41-year career at Bell Labs and AT&T Labs His seminal work on laser resonator modes is considered a classic Since the late 1960s, he and his groups have conducted pioneering studies on lightwave technologies and systems He led the work on amplified WDM transmission systems and championed their deployment for upgrading network capacity He is a member of the National Academy of Engineering and a foreign member of the Chinese Academy of Engineering He is also a recipient of the IEEE David Sarnoff Award, IEEE/OSA John Tyndall Award, OSA Ives Medal/ Quinn Endowment, AT&T Science and Technology Medal, and IEEE Photonics Award Alan E Willner has worked at AT&T Bell Labs and Bellcore, and he is Professor of Electrical Engineering at the University of Southern California He received the NSF Presidential Faculty Fellows Award from the White House, Packard Foundation Fellowship, NSF National Young Investigator Award, Fulbright Foundation Senior Scholar, IEEE LEOS Distinguished Lecturer, and USC University-Wide Award for Excellence in Teaching He is a Fellow of IEEE and OSA, and he has been President of the IEEE LEOS, Editor-in-Chief of the IEEE/OSA J of Lightwave Technology, Editor-in-Chief of Optics Letters, Co-Chair of the OSA Science & Engineering Council, and General Co-Chair of the Conference on Lasers and Electro-Optics Optical Fiber Telecommunications V B Systems and Networks Edited by Ivan P Kaminow Tingye Li Alan E Willner AMSTERDAM • BOSTON • HEIDELBERG • LONDON NEW YORK • OXFORD • PARIS • SAN DIEGO SAN FRANCISCO • SINGAPORE • SYDNEY • TOKYO Academic Press is an imprint of Elsevier Academic Press is an imprint of Elsevier 30 Corporate Drive, Suite 400, Burlington, MA 01803, USA 525 B Street, Suite 1900, San Diego, California 92101-4495, USA 84 Theobald’s Road, London WC1X 8RR, UK ¥ This book is printed on acid-free paper  Copyright Ó 2008, Elsevier Inc All rights reserved No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher Permissions may be sought 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Parents with Love—AEW This page intentionally left blank Contents Contributors ix Chapter Overview of OFT V volumes A & B Ivan P Kaminow, Tingye Li, and Alan E Willner Chapter Advanced optical modulation formats Peter J Winzer and Rene´-Jean Essiambre 23 Chapter Coherent optical communication systems Kazuro Kikuchi 95 Chapter Self-coherent optical transport systems Xiang Liu, Sethumadhavan Chandrasekhar, and Andreas Leven 131 Chapter High-bit-rate ETDM transmission systems Karsten Schuh and Eugen Lach 179 Chapter Ultra-high-speed OTDM transmission technology Hans-Georg Weber and Reinhold Ludwig 201 Chapter Optical performance monitoring Alan E Willner, Zhongqi Pan, and Changyuan Yu 233 Chapter ROADMs and their system applications Mark D Feuer, Daniel C Kilper, and Sheryl L Woodward 293 Chapter Optical Ethernet: Protocols, management, and 1–100 G technologies Cedric F Lam and Winston I Way Chapter 10 Fiber-based broadband access technology and deployment Richard E Wagner 345 401 vii viii Chapter 11 Global landscape in broadband: Politics, economics, and applications Richard Mack Chapter 12 Metro networks: Services and technologies Loukas Paraschis, Ori Gerstel, and Michael Y Frankel Contents 437 477 Chapter 13 Commercial optical networks, overlay networks, and services Robert Doverspike and Peter Magill 511 Chapter 14 Technologies for global telecommunications using undersea cables Se´bastien Bigo 561 Chapter 15 Future optical networks Michael O’Mahony 611 Chapter 16 Optical burst and packet switching S J Ben Yoo 641 Chapter 17 Optical and electronic technologies for packet switching Rodney S Tucker Chapter 18 Microwave-over-fiber systems Alwyn J Seeds Chapter 19 Optical interconnection networks in advanced computing systems Keren Bergman 695 739 765 Chapter 20 Simulation tools for devices, systems, and networks Robert Scarmozzino 803 Index to Volumes VA and VB 865 Contributors Keren Bergman, Department of Electrical Engineering, Columbia University, 1312 S.W Mudd, 500 West 120th Street, New York, NY 10027, USA, bergman@ee.columbia.edu Se´bastien Bigo, Alcatel-Lucent Bell Labs, Centre de Villarceaux, Route de Villejust, 91620, Nozay, France, Sebastien.Bigo@alcatel-lucent.fr Sethumadhavan Chandrasekhar, Bell Laboratories, Alcatel-Lucent, Holmdel, NJ, USA, sc@alcatel-lucent.com Robert Doverspike, Transport Network Evolution Research AT&T Labs Research – Room A5-1G12, 200 S Laurel Ave, Middletown, NJ, USA, rdd@research.att.com Rene´-Jean Essiambre, Bell Laboratories, Alcatel-Lucent, 791 Holmdel-Keyport Road, Holmdel, NJ 07733, USA, rjessiam@alcatel-lucent.com Mark D Feuer, Optical Systems Research, AT&T Labs, 200 S Laurel Ave, Middletown, NJ, USA, mdfeuer@research.att.com Michael Y Frankel, CTO Office, Ciena, 920 Elkridge Landing Rd, Linthicum, MD, USA, mfrankel@ciena.com Ori Gerstel, Cisco Systems, 170 West Tasman Drive, San Jose, CA 95134, USA, ogerstel@cisco.com Ivan P Kaminow, University of California, Berkeley, CA, USA, Kaminow@eecs.berkeley.edu Kazuro Kikuchi, Department of Frontier Informatics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan, kikuchi@ginjo.k.u-tokyo.ac.jp Daniel C Kilper, Bell Laboratories, Alcatel-Lucent, 791 Holmdel-Keyport Road, L-137, Holmdel, NJ, USA, dkilper@alcatel-lucent.com Eugen Lach, Alcatel-Lucent Deutschland AG, Bell Labs Germany, Lorenzstrasse 10, D-70435 Stuttgart, Germany, eugen.lach@alcatel-lucent.de ix 876 electrical switching fabric, B:502 electrical synchronous demodulation, B:100 electrical time-division multiplexing, B:179 electro-absorption devices, B:5 modulator, B:5, 42, 43, 186, 204, 388, 636, 663 electro-optic bandwidth, B:191 coefficient, B:188 effect, B:807 modulators, B:5 phase comparator, B:210 electroabsorption (EA), A:192 electroabsorption modulator (EAM), A:185, 189, 198, 208, 210, 348 small-signal frequency response, A:353 electroabsorption-modulated lasers (EML), A:347 electromagnetically induced transparency (EIT), A:445 electron charge, B:99, 825 electronic and optical properties, A:28–31 biexciton-binding energy, A:31 excitonic/biexcitonic recombination, A:31 GaAs-based QD technology, A:29 piezoelectric potentials, A:29 shape/composition, QDs, A:28 tuneability of the emission of (InGa)As/GaAs QDs, A:29, 30 electronic bottleneck, B:705, 706 electronic buffers, B:710, 718, 733 electronic compensation for 10-GB/S applications LAN: transmission over MMF, A:699 electronic equalization for 10GBASE-LRM, A:700–701 metro and Long-Haul transmission over SMF E-field domain signal processing, A:705–706 electronic compensation of PMD, A:704–705 electronic equalization to compensate chromatic dispersion, A:703–704 modeling of transmission channel and impairments, A:701–703 Index electronic demodulator error compensation, B:150 electronic demultiplexer circuits, B:192 electronic dispersion compensation (EDC), A:539, B:12, 158, 353, 356, 495 electronic equalization, B:107 and adaptation techniques, A:678–681 BER, adapting coefficients, A:679 implementation considerations, A:673 LMS adaptive transversal filter, A:680 low bit-error rate (BER) application, A:673 minimize BER, A:679 nonclassical channel, A:673 performance metrics for adaptive filter, A:679 synchronous histogram monitor, A:679 to compensate chromatic dispersion, A:703–704 compensation of PMD, A:704–705 for 10GBASE-LRM, A:700–701 electronic logic gates, B:787 electronic multiplexer, B:26, 32, 184, 185, 187–189, 191, 192, 415 electronic packet switch, B:642, 650, 656, 696–699, 701, 705, 720, 721, 725, 731, 732, 735 electronic polarization demultiplexing, B:157, 159 electronic predistortion, B:76, 78 electronic signal processing in optical networks adaptation techniques, A:678–681 data center applications, A:707 electronic compensation for 10-GB/S applications, A:699–707 electronic equalization decision feedback equalizer, A:675–676 linear equalizer, A:673–675 maximum A posteriori equalization, A:677–678 maximum likelihood sequence estimation, A:676–677 variants on theme, A:678 Index high-speed electronic implementation architectural considerations, A:697–699 broadbanding techniques, A:682–697 prospects and trends for nextgeneration systems, A:707–708 role of, A:671–672 storage area networks, A:706–707 electronic signal processing, B:7, 23, 24, 37, 180, 184, 185, 195 electronic signal-processing, adaptive, A:681, 701, 705, 708 high-speed, A:672, 681 receiver-based electronic dispersion compensation (EDC), A:672, 701 signal impairments, mitigate, A:671–672 upgrading data transmission to 10Gb/s over installed fiber, A:672 electronic switch fabrics, B:729 electronic time division multiplexing, B:13, 14, 32, 179, 180–183, 185–195, 197, 199, 201, 202, 210, 218, 224–226, 705, 706 electronic transmission mitigation, B:391 electronically predistorted optical waveforms, B:44 electrooptical effects in silicon, A:398 electrostatic actuation, A:715 embedded DRAM (eDRAM), B:718 EML, see electroabsorption-modulated lasers (EML) emulation, A:641–652 emulators, A:645–647 first-order, limitations, A:642–645 sources, A:647–650 with variable DGD sections, A:650–652 encircled flux, B:837 encode information, B:28 end-to-end connection, B:708 networked information, B:23, 26 optical data path, B:791 endlessly single mode (ESM), A:490, 577 entertainment video service, B:411 equalization filter coefficients, B:161 877 equalizers, A:322 erbium-doped fiber amplifier (EDFA), A:107, 116, 124, 135, 161, 170, 343, B:1, 2, 4, 13, 96, 113, 117, 125, 169, 180, 195, 200, 215, 216, 219, 221–223, 225, 235, 241, 248, 253, 257, 263, 265, 294, 325, 326, 330–334, 338, 388, 389, 413, 496, 497, 561, 564, 565, 572, 584–593, 790, 830, 836, 851 gain spectrum, B:338 systems, B:331, 591 technologies, B:96 error correction, B:564, 582, 583, 706 coding, B:28, 38, 39 error correlation information, B:277 error distribution, B:182 error-free operation, B:217 performance, B:672, 679 ESM, see endlessly single mode (ESM) Ethernet, B:14–16, 19, 132, 169, 179, 196, 200, 225, 345, 346–353, 355, 357–363, 365–383, 385–387, 389–397, 399, 406, 417, 464, 477, 480, 481, 483–486, 490, 491, 493, 502, 506, 507, 513, 515–518, 520, 526, 528, 529, 532, 543, 550, 553, 620, 623, 624, 638, 642, 682, 703, 837 carrier, B:16, 169, 369, 638 frame format, B:358 layer spanning tree protocol, B:543 layering, B:347, 379 passive optical network, B:379, 387, 703 physical layer, B:351 service models, B:378 switches, B:486, 517, 528, 553, 623 transport, B:169, 179, 370, 528, 529 virtual circuits, B:378 Euclidean distance, B:148, 149 European Commission, B:452, 466, 615 evanescent coupler, see directional coupler evanescent coupling, B:824 excess burst rate, B:378 excess information rate, B:378 explicit telemetry, B:309 extinction ratio, B:43, 56, 59, 67, 493, 651, 663 878 extra link capacity, B:545 eye diagram, B:51, 54, 55, 57, 60, 63, 152, 191, 193, 194, 219, 243, 245, 276, 277, 280–283, 581, 582, 594, 663, 676, 839 eye monitoring techniques, B:279 F fabric failure, B:544 fabrication technology, A:467–468 Fabry–Perot, B:253, 352, 440, 681, 751, 826, 827 filters, B:253 lasers, B:352, 440, 827 factory automation, A:357 Fano-interference, A:445 configuration, A:432–433, 438 Faraday rotation, principle, A:350 Fast Ethernet lines, B:518 see also Ethernet fast mixing assumption, A:615 fast mixing model, A:616 fault management, B:243, 244, 278, 856 FAX see dial-up modem FBG, see Fiber Bragg Grating (FBG) FDTD, see finite-difference time-domain (FDTD) federal communications commission, B:17, 402, 403, 407, 408, 413, 453, 458, 468, 519, 528 feed-forward arrangement, B:710 pump, B:333 scheme, B:164 feedback loop, B:77, 78, 214, 497 fiber attenuation, B:246, 388, 591 Fiber Bragg Grating (FBG), A:112, 114, 116, 117, 121, 129, B:9, 181, 253, 661, 586, 632 Fiber Channel, A:706–707, B:485, 486 fiber coupling, B:316, 428 fiber lasers, B:747 fiber lasers/amplifiers, A:503 fiber nonlinearities, B:24, 26, 28, 38, 40–42, 52, 57, 58, 63–65, 69, 70, 73–76, 79, 123, 133, 166, 202, 208, 213, 245, 245, 248, 260, 268, 273–276, 325, 330, 338, 760 Index monitoring techniques, B:275 as source for correlated photons coincidence counting results, A:836 coincidence rates as function in single-photon rates, A:835 correlations between signal and idler photons, measuring, A:834–835 dual-band spectral filter based on double-grating spectrometer, A:834 fiber polarization controller, A:833 photon-counting measurements, A:833 photon-pair source, efficiency of, A:833 quantum efficiency vs dark-count probability, A:835–836 spectral filter with fiber Bragg gratings, implementation of, A:837 transmission curves, A:834 transmission efficiency in, A:834 two-pump photons, A:833 as source for entangled photons coincidence counts and single counts, A:856 degree of polarization entanglement, A:584, 857 efficient source for developing quantum communication technologies, A:858 measured values of S for four Bell states, A:857 measurement of polarization entanglement, A:855–858 nature of entanglement generated, A:851 observed polarization (in) dependence of parametric fluorescence, A:856 parametric fluorescence, source of quantum-correlated photon pairs, A:852 photon-counting modules, A:855 polarization correlations, A:855–856 polarization- entangled states, measurements, A:855 polarization entanglement, experimental setup and sinusoidal variations, A:853 Index polarization-entangled photon pairs in 1550-nm telecom band, A:851 quality of polarization entanglement, A:857 quantum efficiencies, detection of, A:855 signal and idler photon pairs, A:852 fiber optics applications communication, B:47, 50, 71 current status of, B:442 history of, B:445 fiber performance technology, B:426 fiber polarization controller, A:833 fiber refractive index, B:566, 567 fiber to the node, B:410 fiber transmission impairments, B:24 line, B:212 medium, advantages of, B:739 fiber-based access, B:403, 405, 408, 418, 446 broadband, B:16, 401, 403, 404, 410, 431, 438, 453, 469 optical signal processing, B:215, 217 solutions, B:403 fiber-drawing techniques, A:620 fiber-fed base stations, B:760 fiber-in-the-loop deployments, B:468 fiber-optic quantum information technologies degenerate photon pairs for quantum logic in telecom band Hong-Ou-Mandel interference, A:869–876 photon-pair generation in optical fiber, A:863–869 fiber nonlinearity as source for correlated photons, A:832–837, 851–858 high-fidelity entanglement with cooled fiber, A:585–863 quantum theory of four-wave mixing in optical fiber, A:838–851 fiber-to-the-building, B:438, 464 fiber-to-the-curb, B:16, 404, 408, 410, 413, 415, 417, 419–421, 429–431, 438, 442, 443, 458, 462 879 fiber-to-the-home, B:5, 16, 17, 251, 401, 404, 410, 413, 416, 417, 419, 421, 422, 426, 428, 430, 440–442 fiber-to-the-premises, B:410, 416, 418, 437–444, 446, 448, 452, 453, 461, 466–469, 613–615, 624 fiber’s birefringence, A:607 field programmable gate array, B:165, 493 field tests and PMD, A:616–621 figure of merit, A:334–335 for dispersion compensators, A:335 for TODC, A:334–335 filter characteristics, B:53, 67, 68, 320 detuning, B:277 offset, B:283 finite element method, B:812 finite impulse response, B:159, 834 finite linewidth, B:143 see also frequency jitter finite measurement bandwidths, A:617 finite-difference time-domain (FDTD), A:441, 442, B:809 switching dynamics, A:442 first-in-first-out buffer, B:711 first-order PMD, A:633 autocorrelation, A:634 penalty, A:629, 638 fixed filter based nodes, B:499 fixed frequency grid, B:183 fixed wavelength converters, B:725 ‘‘flat’’ passbands, A:287 flat-top filter construction theorem, A:293 flip-chip bonding, A:346 flip-chip, B:189, 422 forgetting factor, B:154 forward error correction, B:10, 12, 23, 28, 39, 60, 63, 65, 67, 125, 145, 167, 180, 205, 247, 306, 372, 385, 493, 564, 571, 582, 583, 596, 604 forward propagating slab waveguide, A:391 four-dimensional signal space, B:50 four-point constellation, B:96 four-stage distribution network, B:786, 787 880 four-wave mixing (FWM), A:760, 762, 833 four-photon scattering (FPS) process, A:838 photon–photon scattering process, A:838 signal and idler photons, A:838 four-wave mixing, B:40, 52, 166, 167, 209, 211, 215–217, 241, 253, 260, 273, 274, 567, 573, 578, 668, 673, 675, 676, 831 Fourier space, B:818 Fourier transforms, B:818 frame check sequence, B:359 frame relay, B:479, 481 France Telecom, B:458 Franz–Keldysh modulators, A:399 Franz-Keldysh effect (FK), A:195, 196, 213, B:5 free spectral range, B:194, 257 free-space optics, B:139 frequency drift, B:62, 113, 139, 247 frequency estimation, B:158, 162, 165 see also phase estimation frequency jitter, B:143 frequency offset compensation, B:163 frequency-domain explanation, B:54 split-step, B:833 frequency-encoding code division multiplexing (FE-CDM), A:320 frequency-shift keying, B:33, 133, 663 Fresnel reflections, B:246 Fujitsu’s 80  80 OXC, A:717 Full Service Access Network Group, B:415 full width at half maximum (FWHM), A:39, 114 full-duplex Ethernets, B:348 fusion splices, B:246 FWHM, see full width at half maximum (FWHM) FWM, see four-wave mixing (FWM) G GaAs-based QD technology, A:29 gain error, B:330, 332, 333 gain peaking, B:189 Index gain ripple, B:308, 330, 338 impact of, B:330 gain-flattening filter, B:326, 584, 585 Galerkin method, B:812 gallium arsenide, B:44 Gas-Based nonlinear optics high-harmonic generation, A:510–511 induced transparency, electromagnetically, A:511 stimulated Raman scattering, A:510 Gate message, B:381 gate oxides, carrier accumulation on, A:403–404 gate switching energy, B:707 Gaussian approximation, B:842, 845 Gaussian AWG, A:283–284 wide passband, A:288 Gaussian distribution, B:115 Gaussian noise, B:30, 115, 259 Gaussian random variables, B:849 Gemini network interface, B:792 generalized multi-protocol label switching (GMPLS), A:367, B:347, 615, 642 generic framing procedure, B:373 germanium photodetectors, A:409–414 benefits, A:411–412 and photoreceivers for integrated silicon photonics, A:409–414 p-type Ge contacts, A:413 single heterojunction, A:413 waveguide (WPDs), A:412 GI-POF see graded-index plastic optical fiber (GI-POF) Gigabit Ethernet, B:10, 200, 346, 348, 349, 351, 353, 355, 357, 370, 372, 373, 385, 392, 394, 485, 521, 703 link, B:346, 392 physical layer, B:349 private line, B:521 see also Ethernet Gigabit interface convertor, B:346 Gires–Tournois etalons, A:326–327 Global Lambda Integrated Facility, B:617 global system for mobile communications (GSM), A:179 Godard algorithm, B:122 Google, B:389 Index Gordon-Mollenauer phase noise, B:162, 167 graded-index plastic optical fiber (GI-POF), A:597, 707 gradient-type optimization algorithm, B:161 grating coupler, A:389–390 backward scattering, A:391–392 fiber-coupling efficiency of, A:392 grating mirrors, reflectivity spectrum, A:348 Gray coding, B:35 grid computing, B:549, 555, 611, 613, 617, 620, 629 grid spacing, B:253 grooming, B:502, 518, 526, 528 Group Velocity Dispersion (GVD), A:494–495 hollow core, A:495 solid core, A:494–495 group-delay ripple, B:320 group-velocity dispersion, B:120, 495, 831 Groupe speciale mobile, B:756 grouped routing, B:851 GSM, see global system for mobile communications (GSM) guard time, B:656, 660, 670, 681, 775, 776, 781, 784, 786, 788 GVD, see group velocity dispersion (GVD) H half mirror, B:112 half-rate decision, B:192 harmonic mixer, B:192 head-end switch, B:393 header error control, B:373 Hello message, B:376 Helmholtz equation, B:805, 806, 817, 838, 839 Hermite–Gaussian modes, B:838 Hermitian matrix, B:848 heterodyne efficiency, B:47 heterodyne receiver, B:13, 96, 100, 102, 105 see also homodyne receiver heterodyne signal, B:104, 746 heterojunction bipolar transistor, B:179 heterostructure photo-transistor, B:755 881 high speed optical modulators, recent developments EAMs, see traveling-wave EAMs external modulators, key performance data, A:186 high-speed modulation, see high-speed modulation, optical modulators intensity modulators based on absorption changes, A:195–197 Electroabsorption (EA), A:195 FK effect, A:195 IS Stark-shift modulator, A:197 KramersKroănig relation, A:185 modulators based on phase changes and interference, A:193–195 LiNbO3 technology, A:195 linear Pockels effect, A:193 Mach–Zehnder configuration, A:194–195 novel types of modulators, see modulators, novel types on-off keying (OOK), A:184 principles and mechanisms of external optical modulation, A:185–186 quantum-confined Stark effects (QCSE), A:185 high-Q nanocavities, A:463–466 high-bit-rate digital subscriber line, B:443 high-capacity packet switches, B:696, 697 high-definition television, B:406, 413, 457, 461–463, 551, 552 high-fidelity entanglement with cooled fiber measurements of ratio between coincidence counts and accidentalcoincidence counts, A:861 photon-counting modules, A:860 two-photon interference, A:862 violation of Bell’s inequality, A:863 high-index-contrast waveguide, A:386 types and performance on SOI, A:384–388 high-performance optical channels, B:244 high-power photodetectors charge-compensated uni-traveling carrier photodiodes, A:239 saturation currents/RF output powers, A:239 882 high-power photodetectors (continued) high-power PDA, A:240 Partially Depleted Absorber (PDA) photodiodes, A:240 high-power waveguide photodiodes, A:242–244 coplanar waveguide (CPW), A:243 modified uni-traveling carrier photodiodes, A:240–242 modified UTC (MUTC), A:240 saturation, impact of physical mechanisms, A:234 thermal considerations Au bonding, advantage, A:244 transimpedance amplifier (TIA), A:233 uni-traveling carrier photodiodes, A:235–238 advantages, compared with PIN structure, A:235 optical preamplifiers, advantage, A:236 pseudo-random bit sequence (PRBS) signal, A:237 space-charge effect, A:238 high-quality video, B:553, 554 high-speed direct modulation of strained QW lasers InAlGaAs and InGaAsP systems/ comparison with theory, experimental results, A:66–69 microwave modulation experiment, A:66 small-signal modulation response, theory, A:65–66 K factor, A:65 high-speed edge emitters, tunnel injection resonances, A:43–44 high-speed electronic implementation architectural considerations, A:697–699 broadbanding techniques common source amplifier, A:684 compensated degenerative amplifier, A:686 implementation of adaptive, A:681 principles of, A:682–683 RC broadbanding, A:683–687 series shunt-peaked broadbanding, A:694–697 Index series-peaked, A:692–693 shunt-peaked, A:687–692 small signal, high-frequency equivalent circuit of amplifier, A:684, 695 small signal, high-frequency model of amplifier, A:684, 692 use of CMOS technology, A:682 electronic compensation for 10-GB/S applications, A:699–707 data center applications, A:707 electronic equalization for 10GBASE-LRM, A:700–701 LAN: transmission over MMF, A:699–701 metro and long-haul transmission over SMF, A:701–706 storage area networks, A:706–707 prospects and trends for nextgeneration systems, A:707–708 high-speed low-chirp semiconductor lasers, A:53 gain and differential gain, A:54 quantum dot lasers, see quantum dots (QD), lasers QW lasers, DC properties of long-wavelength, see DC properties of long-wavelength, QW lasers strained QW lasers, high-speed direct modulation, see high-speed direct modulation of strained QW lasers high-speed modulation, optical modulators chirp issues, modulators sinusoidal modulation, A:191 issues/principles/limitations, A:187–190 factors, A:187 flip-chip mounting, A:188 optoelectronic integrated circuits (OEICs), A:187 ‘‘traveling-wave,’’ A:190 high-speed nanophotonics device structure, A:37 directly modulated QD lasers, A:36–37 Index eye pattern/bit-error rate measurements, QD laser module, A:37–38 nonreturn-to-zero (NRZ), A:37 saturation of radio frequency (RF) amplifier, A:38 temperature-dependent BER measurements, A:38 high-Speed Ethernet, B:391, 411 photodiode, B:185, 191, 192, 270 transmission experiments, B:213 Higher Speed Study Group, B:179, 390 higher-layer protocol identifiers, B:389 highly nonlinear fibers (HNLF), A:761 hinge model, A:615–616, 620, 631–632 histogram techniques, B:277 hitless Operation, B:306 hollow-core PBGF, A:579–585 definition, A:581 dispersion, A:578–579 Bessel function, zeroth-order, A:582 five transverse mode intensity profiles, A:584 modal properties, A:584–585 origin, A:580–581 homodyne detection, B:13, 48, 95, 97, 100, 133 homodyne phase-diversity receiver, B:105, 112, 113, 115, 117 homodyne receiver, B:96–98, 100, 102, 106, 111, 123, 124, 127 optical circuit, B:111 Hong-Ou-Mandel interference with fibergenerated indistinguishable photons copolarized identical-photon source, 50/50 Sagnac-loop, A:871 dual-frequency copolarized pump, preparation of, A:872 experimental parameters, A:873 experimental results, A:874 experimental setup, A:872 fiber-based source of photon pairs at telecom-band wavelength near 1550 nm, A:869 four-wave mixing, A:869 photons produced by QS source, A:871 883 QS source and use in HOM experiment, A:873 QS source by measuring CAR, features of, A:872–875 quantum interference at beam splitter, A:870 real-life imperfections, A:875 theoretical simulation results of HOM dip, A:875 hubbed rings, B:302 hybrid communication network, B:226 hybrid integration platform, B:787 Hybrid Optical Packet Infrastructure, B:617 hybrid transmission, B:169 hybrid-fiber coaxial, B:16, 404, 460 I IEEE Higher Speed Study Group, B:179 III–V photonic integrated circuits, A:343–345, 376–377 future of OEO networks enabled by III–V VLSI, A:372–373 on chip amplifiers offer additional bandwidth, A:373–374 mobile applications for optical communications, A:375–376 power consumption and thermal bottleneck challenge, A:374–375 manufacturing advances for III-V fabrication implying scalability defect density and functionality per chip, A:361–363 design for manufacturability, A:356–358 in-line testing, A:358–359 yield management methodologies, A:359–361 manufacturing advances for III–V fabrication implying scalability, A:355–356 network architecture impact of LSI PICs component consolidation advantages, A:366–367 data ingress/egress in digital ROADM, A:369–370 884 III–V photonic integrated circuits (continued) DON architecture, A:367–368 network management advantages, A:370–372 Q-improvement cost, A:369 photonic material integration methods, A:345–346 small-scale integration large-scale III–V photonic integration, A:351–355 multi-channel interference-based active devices, A:348–351 single-channel multi-component chips, A:347–348 III–V semiconductor arena Franz–Keldysh modulators, A:399 Quantum-Confined Stark Effect (QCSE) modulators, A:399 impairment mitigation, B:18, 75, 196 impairment of the transmitted signal, B:308 impairment-aware first-fit algorithm, B:240 impairment-aware routing, B:237 impairment-unaware algorithms, B:240 implementation of MLSE, challenges, A:700 in-band OSNR monitoring, A:800 In-Fiber devices, A:501–502 in-line testing, A:358–359 in-phase and quadrature, B:96 incumbent local exchange carriers, B:419, 448 indium phosphide, B:44, 186 modulators, B:45 semiconductors, B:6 individual bulk devices, B:253 information spectral density, B:604 InGaAs/GaAs semiconductor, A:474 ingression paths, B:794 injection-locked lasers, B:5 inner ring, B:538 InP PLCs, A:275 geometry as source of birefringence, A:275 InP-based transmitter devices data capacity for, A:365 number of functions per chip for, A:364 Index InP/InGaAsP quantum well structure, A:468 InP/InGaAsP/InGaAs SACM APDs, A:246 input–output coupling, A:388–389 gratings, A:389–392 tapers, A:389, 390 insertion loss, B:654 ‘‘instantaneous frequency’’ of electric field, A:444 instruction-level parallelism, B:768 integrated silicon photonics chips, examples, A:416 20 Gb/s dual XFP transceiver, A:416–417 40-Gb/s WDM transceiver, A:417 integrated driver and MZ modulator, A:418 receiver performance, A:419 Integrated yield management (IYM) triangle, A:359 Intel, B:769 intelligent optical switch, B:528 intensity eye diagrams, B:50, 53, 57, 60 see also eye diagram intensity modulation, B:30, 60, 95, 133, 137, 625, 663, 739, 745, 749, 752, 834, 837 direct detection, B:95, 739 intensity-dependent refractive index coefficient, B:273 inter-nodal management, B:243 inter-symbol interference, B:31, 135, 349, 565, 582, 843 interchannel effects, B:166 interconnects, B:720, 721, 732 interframe gaps, B:373 Interior Gateway Protocols, B:532 intermediate frequency, B:48, 95, 743 intermodulation distortion (IMD), A:166, 168, B:426 international telecommunication union, B:347, 569 Internet Engineering Task Force, B:532 Internet Group Management Protocol, B:553 Internet lingo peer-to-peer, B:555 Index Internet Protocol, B:345, 346, 448, 480, 516, 695, 701 television, B:15, 19, 295, 345, 389, 391, 441, 448, 449, 457, 461, 462, 464, 529, 535, 553, 555 Internet service provider, B:389, 515, 516, 518, 523, 526, 528, 551–555 interoperability, B:620 interstage, B:585, 787 intersymbol interference (ISI), A:322 effects, A:672 intra-fiber device (cutting/joining), A:499–502 cleaving/splicing, A:500 in-fiber devices, A:501–502 mode transformers, A:500–501 intrachannel dispersion slope, B:581–583 intrachannel effects, B:167, 579, 580, 597 intrachannel four-wave mixing, B:40, 597, 600, 601 see also four-wave mixing intrachannel nonlinearities, B:41, 71, 73, 75 intradyne detection, B:63, 64 intradyne receiver, B:102, 164–166 inverse dispersion fiber, B:125 ISO standards organization, B:513 ITRS Semiconductor Roadmap, B:706 J J  K WSS, A:317 Japanese Ministry of International Trade, B:458 JET signaling, B:646–648, 679 jitter, B:143, 204, 206, 218, 237, 283, 533, 554, 651, 653 Jones matrix, B:159, 160 Jones matrix formalism, A:541 Jones vector, A:654, 658 Joule heating, B:755 just-enough-time, B:645 just-in-time, B:645, 646 K Karhunen–LoSˇve Technique, B:847 ‘‘KEISOKU’’, A:82 Kerr effect, B:12, 24, 25, 70, 566, 567, 572 885 Kerr nonlinear material, A:438–439 transmitted vs input power, A:440 Kerr nonlinearities, A:499, 778, 789, 790, 794 Kerr-related nonlinear effects, PCF, A:504–507 correlated photon pairs, A:505–506 parametric amplifiers/oscillators, A:505 soliton self-frequency shift cancellation, A:507 supercontinuum generation, A:504–505 killer application, B:461, 551 L label switched paths, B:365, 541 labor-intensive changes, B:430 Laguerre–Gaussian modes, B:838 see also Hermite–Gaussian modes LAN, see local area networks (LAN) LAN/MAN Standard Committee, B:346 lanthanum-doped lead zirconium titanate, B:655 Large Channel Count ROADMs, A:316–317 large effective area core (LMA), A:543, 558, 562, 570–572 Large Hadron Collider, B:614 large-scale photonic integrated circuits (LS-PICs), A:351–352 100 Gb/s DWDM transmitter module, A:366 challenges to production, A:356 design, A:357 future, A:373 manufacturing, A:359–360, 362 network architecture impact of component consolidation advantages, A:366–367 data ingress/egress in digital ROADM, A:369–370 DON architecture, A:367–368 network management advantages, A:370–372 Q-improvement cost, A:369 output power distributions on 40-channel, A:364 886 large-scale photonic integrated circuits (LS-PICs) (continued) process capability (Cp)/capability index (Cpk), A:356 response vs frequency curves, A:353 upper control limit (UCL)/lower control limit (LCL), design, A:357 wafer processing, A:358 wafers yields vs chip size for time periods of production, A:362 and yield improvement, A:359–361 see also Integrated yield management (IYM) triangle laser chips, B:422 laser frequency offset, B:142, 143, 146 laser optical fiber interface (LOFI), A:57 laser rangefinders, B:423 latching/nonlatching, B:653 latency, B:21, 310, 374, 504, 533, 549, 550, 554, 646, 648–650, 664, 766–769, 772, 773, 775, 780–785, 787–789, 791, 792, 795, 796 lattice constants, A:461 Laudable characteristics, B:244 Layer, functions, B:16, 358 Layer, intelligence, B:507 LCOS, see liquid crystal-on-silicon (LCOS) LCOS-based  WSS, A:725 LE see linear equalizer legacy transport networks, B:371 LFF, see low-fill factor (LFF) light emitter, A:468 substance, A:469 light transmission , input port to output port, A:314 light-emitting diode, B:811 Lightguide Cross Connect, B:520 lightpath labeling, B:309 lightwave systems, historic evolution of, B:26 line coding, B:23, 24, 28, 38, 39, 53, 72, 348, 349, 355, 370, 373 line defect, A:457, 458 line-coded modulation, B:53 line/point-defect systems, A:457, 458 linear equalization, B:582 Index linear equalizer, A:673–675 designing transversal filter adaptation algorithm for tap weights, A:675, 676–678 analog vs digital implementation, A:675 number of taps, A:674–675 removal of ISI, linear filter, A:673, 676 structure of, A:674 linear optical quantum computing (LOQC), A:863 linear refractive index of silica, B:273 linearly polarized electromagnetic wave, A:443 linewidth enhancement factor (LEF), A:54 link aggregation group, B:374 link capacity adjustment scheme, B:347 link state advertisements, B:540 link utilization, B:782 liquid crystal-on-silicon (LCOS), A:723 features of, A:723–724 lithium niobate, B:5, 44, 187, 206, 726, 748, 751 LMA, see large effective area core (LMA) loading coils, B:10 Local Access and Transport Area, B:519 local area networks (LAN), A:668, B:236, 345 local fault, B:357 ‘‘local field’’ model, A:247 local loop unbundling, B:453 local oscillator power, B:95 localization of fiber failure, B:250 LOFI, see laser optical fiber interface (LOFI) logically inverted data pattern, B:61 long-distance monopolies, B:452 optical communications, B:565 long-haul applications, B:51, 166 long-wavelength VCSELS, A:83–87 loop timing, B:385 Lorentzian distribution, B:143 loss of signal, B:357, 533 low-density parity check, B:353 low-dispersion, B:2 Index low-fill factor (LFF), A:132 low-pass filtering effects, B:190 lower sideband, B:265 Lucent’s optical system layout for OXC, A:718 M M  M star coupler, ideal, A:297 Mach–Zehnder delay interferometer (MZDI), A:276, 277, 382, 401, 402 demodulators, A:278 interleavers, A:279 plot of optical power from, A:295 possible ways of laying out the MZI–AWG, A:295 switches, usage of SAG, A:348 Mach-Zehnder characteristic, B:194 delay line interferometer, B:265 demodulator, B:599 electro-optic amplitude, B:598 electro-optic modulator, B:594 intensity, B:663 interferometer, B:193, 206, 209, 256, 598, 602, 634, 750 modulator, A:405, B:42, 43, 126, 134, 184, 206, 594, 758, 807 based on CMOS gate configuration, A:406 lumped-element, A:408 traveling-wave, A:408 push–pull modulators, B:96 Management Information Base, B:386 Manakov equation, A:656 Manakov-PMD equation, A:655–656 MAP, see Maximum A Posteriori Equalization (MAP) Marcum Q-function, B:140, 142 master-oscillator power-amplifier (MOPA), A:112 master-planned communities, B:441 matched filter, B:30, 31 matrix coefficients, B:162 matrix inversion, B:160 Maxichip, A:133 887 maximal-ratio combining, B:105, 109 Maximum A Posteriori Equalization (MAP), A:677–678 with BCJR algorithm, A:677–678 to improve system performance with FEC, A:678 maximum likelihood estimation, B:97 sequence estimation, B:23, 150, 182 maximum likelihood sequence estimation (MLSE), A:676–677 whitened matched filter (WMF), transversal filter, A:676–677 Maximum Refractive Index, A:488–489 maximum transport unit, B:682 Maxwell distribution, A:613, 614–615 Maxwell’s equations, B:804, 805, 809, 816, 820, 822 McIntyre’s local-field avalanche theory, A:247 MCVD, see modified chemical vapor deposition (MCVD) MDSMT, see modified dead-space multiplication theory (MDSMT) Mean time between failure, B:534 Mean time to repair, B:535 measured BER vs average optical power, A:700 media-independent interface, B:347, 348 medium access control, B:346 memory elements, B:20, 766, 767, 772 memory-less modulation, B:37 MEMS technologies and applications, emerging MEMS-tunable microdisk/microring resonators, A:747–748 lightconnect’s diffractive MEMS VOA, A:746 photonic crystals with MEMS actuators, A:748–749 MEMS, see Microelectromechanical system (MEMS) metalorganic chemical vapor deposition (MOCVD), A:27, 29, 35, 82, 83, 87, 88 metalorganic vapor phase epitaxy (MOVPE), A:346 888 metro and long-haul transmission over SMF, A:701–707 e-field domain signal processing, A:705–706 electronic compensation of PMD, A:704–705 electronic equalization to compensate chromatic dispersion, A:703–704 modeling of transmission channel and impairments, A:701–703 Metro Ethernet Forum, B:347 services, B:481 metro layer networks, B:518 metro networks, B:17, 196, 307, 484, 487, 495, 496, 498, 502, 505, 514, 524, 548 architectures, evolution of, B:482 geography of, B:505 modulation formats for, B:493 metro nodes, B:496 metro optical transport convergence, B:484 metro segment, B:552 metropolitan area networks, B:346, 483, 511 micro-ring and micro-disk resonators, A:349 fabricated eight-channel active, A:350 vertically coupled to I/O bus lines, A:350 microelectro mechanical systems, B:10, 249, 312 microelectromechanical system (MEMS), A:83, 89, 99 emerging MEMS technologies and applications MEMS-tunable microdisk/microring resonators, A:747–748 photonic crystals with MEMS actuators, A:748–749 optical switches and crossconnects 3D MEMS switches, A:716–719 two-dimensional MEMS switches, A:714–716 other optical MEMS devices data modulators, A:743–745 variable attenuators, A:745–747 tunable lasers, A:741–743 wavelength-selective mems components diffractive spectrometers and spectral synthesis, A:739–741 Index dispersion compensators, A:733–734 reconfigurable optical add–drop multiplexers, A:721–722 spectral equalizers, A:719–721 spectral intensity filters, A:730–733 transform spectrometers, A:734–738 wavelength-selective crossconnects, A:728–730 wavelength-selective switches, A:722–728 microoptoelectromechanical systems (MOEMS), A:713 microstructured optical fibers (MOF) effective-index microstructured optical fibers (EI-MOF), A:575–579 attenuation, A:579 basic concepts, A:575–576 dispersion, A:578–579 endless single mode/large effective area/coupling, A:576–577 small modal area/nonlinearity, A:577–578 hollow-core PBGF, A:579–585 waveguiding, A:573–575 microwave monolithic integrated circuit, B:745 microwave OE oscillators, A:420–421 spectrum analyzer, A:421 Miller multiplication of transistor, A:685 misalignment, B:837 mitigation, B:70 MLSE, see multiple likelihood sequence estimation (MLSE) MMF, see multimode fiber (MMF) MMI, see multimode interference (MMI) mobile applications for optical communications, A:375–376 MOCVD, see metalorganic chemical vapor deposition (MOCVD) modal transmission line theory, B:820 mode division multiplexing, B:36 mode transformers, A:500–501 mode-locked fiber lasers, B:204 mode-locked laser diodes, B:204 mode-locked pulse train, frequency spectrum of, A:321 mode-locked QD lasers Index device structure, A:39 hybrid mode-locking, A:41–42 passive mode-locking, A:39–40 full width at half maximum (FWHM), A:39 modes see sub-pulses modified chemical vapor deposition (MCVD), A:491, 539, 562–564 modified dead-space multiplication theory (MDSMT), A:254 modified uni-traveling carrier photodiodes (MUTC), A:240 modular deployment, B:306 modulation format, B:12, 13, 18, 24, 27, 28–30, 34, 36, 37, 41, 42, 46, 49, 50, 52, 55–58, 61, 62, 64, 65, 67–76, 97, 100, 108, 132–135, 161, 169, 171, 181, 183, 184, 194, 195, 202, 203, 215–217, 222, 223, 226, 237–239, 256, 257, 259, 260, 264, 272, 309, 321, 390, 413, 415, 493–495, 569, 572, 583, 593, 596–600, 604–606, 660, 663, 834–837 auxiliary polarization, B:40 binary, B:28, 37, 63, 70, 97, 185 coded, B:28, 39, 41, 53 duobinary, B:41, 45, 53, 495 response, B:748, 750 tone techniques, B:253 waveforms, B:28–30, 33, 36, 46, 59 with memory, B:37, 38 modulator devices, A:404–409 reducing modulators size, A:407 variable attenuator waveguide, A:404 modulator, B:134, 183, 206, 258, 662 bias, B:44, 56, 190 extinction ratios, B:67 modulators, novel types Intersubband Electroabsorption Modulators, A:208–211 effects, A:209 negative chirp/high-optical transmission, A:209 Silicon-Based Modulators, A:211–213 complementary metal–oxide– semiconductor (CMOS), A:212 G–L /Ge intervalley scattering time, A:213 889 MOEMS, see microoptoelectromechanical systems (MOEMS) molecular beam epitaxy (MBE), A:37, 44, 82, 87, 110, 252 moment generating function, B:849 monitoring physical-layer impairments, B:245 monolithic integration, B:684 Monte Carlo methods, B:841, 842 Moore’s law, B:735, 765 MOPA, see master-oscillator poweramplifier (MOPA) Mosaic browser, B:404 MPEG-2 and, B:4 compression, B:462 multi-Gbaud rates, B:64 multi-mode fiber model, B:757, 839 multi-mode interference devices, B:807 multi-mode Systems, B:837 multi-processor chips, B:20 multi-protocol label switching, B:365, 513, 643 multi-section directional coupler, A:274 multi-service platform, B:528 multichannel entertainment digital video, B:535 multicore architectures, emergence of, B:797 multifamily dwelling units, B:464 multifiber wavelength-selective switch, B:296 multilayer network stack, B:537 multilevel coding, B:40, 123 multilevel decision circuitry, B:149 multilevel modulation, B:13, 24, 37, 38, 40, 78, 96, 97, 226 multimode fiber (MMF), A:672 multimode fiber-coupled 9xx nm pump lasers active-cooled pump diode packages beam symmetrization coupling optics, A:132–133 Maxichip, A:133 ‘‘wallplug efficiency,’’ A:133 BA pump diode laser broad-area single-emitter (BASE), A:127 frequency stabilization, A:129 slow-axis BPP,causes for NA degradation, A:127 Index 890 multimode fiber-coupled 9xx nm pump lasers (continued) classification of 9xx-nm mm pump lasers heat transport classification, A:125–126 optical classification, A:126–127 combined power, A:133 passive-cooled 9xx-nm MM pumps beam symmetrization coupling optics, A:131–132 direct coupling, A:129–131 low-fill factor (LFF), A:132 simple lens coupling, A:131 Single Emitter Array Laser (SEAL), A:132, 133 pulse operation, A:133 multimode interference (MMI), A:112, 232, 271, 393, 730 multiparty gaming, B:480 multipath interference, B:322 multiple access interference, B:633 multiple input multiple-output, B:36, 161 multiple likelihood sequence estimation (MLSE), A:626 multiple service operators, B:378, 413 multiple-quantum-well, B:749 multiple-wavelength transmission schemes, B:767 multiplexing, B:20, 26, 28, 29, 31–33, 36, 47, 49, 53, 64, 78, 119, 131, 132, 180, 183, 185, 186, 193, 195, 201, 203, 204, 206, 207, 208, 215, 217, 218, 222, 223, 226, 238, 242, 247, 251, 253, 294, 296, 297, 304, 311–313, 320, 322, 346, 347, 353, 368, 372, 415, 417, 444, 478, 484, 485, 490, 491, 498–500, 514, 517, 522, 526, 527, 604, 617, 626, 629, 635, 642, 644, 656, 661, 665, 669, 695, 803 see also demultiplexing multiplication regions, low-excess noise APDs AlInAs, A:250–252 active region, definition, A:251 heterojunction, A:252–256 electrons gain energy, A:254 ‘‘initial-energy effect,’’ A:254 MDSMT, A:254 thin, A:248–250 ‘‘dead space,’’ A:248 noise reduction in thin APDs, A:250 ‘‘quasi-ballistic,’’ A:249 multipoint-to-multipoint, B:359, 378, 380, 481 multiport switch, B:500, 501 multisource agreement, B:346 multistage topologies, B:773, 782, 788 multisymbol phase estimation, B:49, 132 MUX see multiplexing N nanocavity with various lattice point shifts, A:465 Napster, B:468 narrowband digital cross-connect system, B:522 National LambdaRail, B:617 national research and educational networks, B:611 National Television System Committee, B:411 Negative Core-Cladding Index Difference all-solid structures, A:493 higher refractive index glass, A:492–493 hollow-core silica/air, A:492 low leakage guidance, A:493 surface states, core-cladding boundary, A:493 network architectures, B:297, 410, 482 automation, B:503 component failures, B:522, 537 diameter, B:553, 767, 769, 789 dimensioning, B:850 element, B:293 evolution, B:511, 549 fault management, B:244 management, B:2, 234, 239, 305, 310, 324, 336, 339, 366, 440, 445, 483, 556, 766 modeling, B:850 network interface, B:620 -on-chip, B:797 optimization problem, B:547 ... specialty fibers include active fibers, polarization control fibers, dispersion compensation fibers, highly nonlinear fibers, coupling or bridge fibers, high-numerical-aperture fibers, fiber Bragg... They are: hybrid -fiber- coax (HFC) systems, fiber- to-the-cabinet (FTTC) systems, and fiber- to-the-home (FTTH) systems 1.4.11 Chapter 11 Global landscape in broadband: Politics, economics, and applications... the “bubble -and- bust” until the present, the actual demand for bandwidth has grown at a very healthy $80% per year globally; thus, real traffic demand experienced no bubble at all The growth and