[...]... operation and characteristics are discussed in Chapter 3 Also included in this chapter is the overview of VLSI MOSFET characteristics such as MOSFET scaling, hot-electron effects, and MOSFET parasitic elements The MOS capacitor, which is used for the characterization of MOS process and is basic to understanding MOSFET operation, is the topic for Chapter 4 From a circuit modeling point of view, MOSFET. .. physics can understand the intricacies of MOSFET modeling Chapter 1 deals with the overview of various aspects of device modeling for circuit simulators Chapter 2 is a brief but complete (for understanding MOSFET models) review of semiconductor device physics and p n junction theory The MOS transistor characteristics as applied to current MOS technologies are discussed in Chapter 3 The theory of MOS capacitors... essential for the understanding of MOS models are covered in Chapter 4 Different MOSFET models, such as threshold voltage, D C (steady-state), AC and reliability models are the topic of discussion in Chapters 5, 6, 7 and 8, respectively Chapters 9 and 10 deal with data measurements and model parameter extraction The diode and MOSFET models implemented in Berkeley SPICE, a defacto industry standard circuit... models for large and small geometry MOSFETs are developed in Chapter 5 The device DC models are discussed in Chapter 6 while AC models, both small and large signal, are covered in Chapter 7 Models for hot-electron effect, particularly substrate and gate current models, and device life-time models are covered in Chapter 8 The experimental setup, required for taking device data for different geometries and. .. (Corporate Consultant) and Dr Llanda Richardson (Consultant )for their encouragement and assistance in writing this book I am deeply indebted to Dr F Fox, Dr D Ramey, and Mr K Mistry for their excellent work in careful reading of many of the chapters in the first draft of the manuscript and giving their critical comments I am also indebted to Drs R Rios, J Huang and Mr K Roal for this invaluable help... accuracy and speed of simulation It has been found that for large circuits the MOSFET model evaluation accounts for a large percentage (up to 80%) of the total analysis time [151 This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexities of the models Thus realistic circuit modeling requires an understanding of the accuracy and. .. power devices are built with these technologies The modeling of power MOSFETs is not covered in this book [13,14] 1.1 Circuit Design and MOSFETs 3 1.1 Circuit Design with MOSFETs For today’s circuit design, computer-aided simulation [151-[ 171 has become an indispensable tool because: 0 0 Manual techniques traditionally used for circuit analysis and design are simply inadequate because of the complexity... Structure and Operation 69 3.1 MOSFET Structure 69 3.2 MOSFET Characteristics 73 3.2.1 Punchthrough 8 1 3.2.2 MOSFET Capacitances 82 3.2.3 Small-Signal Behavior 84 3.2.4 Device Speed 86 3.3 MOSFET Scaling 87 3.4 Hot-Carrier Effects 90 3.5 VLSI Device Structures 93 3.5.1 Gate Material 93 3.5.2 Nonuniform Channel Doping 94 3.5.3 Source-Drain Structures 95 3.5.4 Device Isolation 98 3.5.5 CMOS Process 99 3.6 MOSFET. .. understanding of the accuracy and limitations of the various device models 1.2 MOSFET Modeling 5 and the computational techniques used for performing the analysis of the model 1.2 MOSFET Modeling The device models describe the terminal behavior of a device in terms of current-voltage (I-V), capacitance-voltage (C-V) characteristics, and the carrier transport process which takes place within the device These... device current (and capacitances) and the model is generally sufficient for circuit modeling work During transient analysis, calculation of transistor current is carried out thousands of time, therefore, it is imperative that the model be both computationally efJicient, and accurate Thus, the model needs not only to be accurate but simple too; there is always a trade-off between accuracy and simplicity . there% my not be reproduced in any form or by any means, electronic or mechanical, including photocopying, recording or any information storage and retrieval system now known or to be invented,. JERSEY * LONDON - SINGAPORE * BElJlNG SHANGHAI * HONG KONG * TAIPEI * CHENNAI International series on Advances in solid state Electronics and Technology Founding Editor: Chih-Tang sah Published. w1 h1" alt="" MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology Founding Editor: Chih-Tang Sah (ASSET)