Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices NATO Science Series A Series presenting the results of scientific meetings supported under the NATO Science Programme. The Series is published by IOS Press, Amsterdam, and Kluwer Academic Publishers in conjunction with the NATO Scientific Affairs Division Sub-Series I. Life and Behavioural Sciences IOS Press II. Mathematics, Physics and Chemistry Kluwer Academic Publishers III. Computer and Systems Science IOS Press IV. Earth and Environmental Sciences Kluwer Academic Publishers V. Science and Technology Policy IOS Press The NATO Science Series continues the series of books published formerly as the NATO ASI Series. The NATO Science Programme offers support for collaboration in civil science between scientists of countries of the Euro-Atlantic Partnership Council. The types of scientific meeting generally supported are “Advanced Study Institutes” and “Advanced Research Workshops”, although other types of meeting are supported from time to time. The NATO Science Series collects together the results of these meetings. The meetings are co-organized bij scientists from NATO countries and scientists from NATO’s Partner countries – countries of the CIS and Central and Eastern Europe. Advanced Study Institutes are high-level tutorial courses offering in-depth study of latest advances in a field. Advanced Research Workshops are expert meetings aimed at critical assessment of a field, and identification of directions for future action. As a consequence of the restructuring of the NATO Science Programme in 1999, the NATO Science Series has been re-organised and there are currently Five Sub-series as noted above. Please consult the following web sites for information on previous volumes published in the Series, as well as details of earlier Sub-series. http://www .nato .int/science http://www .wkap .nl http://www .iospress .nl http://www .wtv-books .de/nato-pco .htm Series II: Mathematics, Physics and Chemistry – Vol. 151 Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices edited by Josef Sikula Brno University of Technology, Brno, Czech Republic and Michael Levinshtein Ioffe Institute of Russian Academy of Sciences, St. Petersburg, Russia KLUWER ACADEMIC PUBLISHERS NEW YORK, BOSTON, DORDRECHT, LONDON, MOSCOW eBook ISBN: 1-4020-2170-4 Print ISBN: 1-4020-2169-0 ©2005 Springer Science + Business Media, Inc. Print ©2004 Kluwer Academic Publishers All rights reserved No part of this eBook may be reproduced or transmitted in any form or by any means, electronic, mechanical, recording, or otherwise, without written consent from the Publisher Created in the United States of America Visit Springer's eBookstore at: http://ebooks.kluweronline.com and the Springer Global Website Online at: http://www.springeronline.com Dordrecht V CONTENTS PREFACE IX I. Noise Sources 1/f Noise Sources 3 F.N. Hooge Noise Sources in GaN/AlGaN Quantum Wells and Devices 11 S. Rumyantsev 1/f Noise in Nanomaterials and Nanostructures: Old Questions in a New Fashion 19 M. N. Mihaila 1/f Spectra as a Consequence of the Randomness of Variance 29 G. Härtler Quantum Phase Locking, 1/f Noise and Entanglement 37 M. Planat and H.Rosu Shot Noise in Mesoscopic Devices and Quantum Dot Networks 45 M. Macucci, P. Marconcini, G. Iannaccone, M. Gattobigio, G. Basso and B. Pellegrini Super-Poissonian Noise in Nanostructures 53 Ya. M. Blanter Stochastic and Deterministic Models of Noise 61 J. Kumiþák II. Noise in Nanoscale Devices Noise in Optoelectronic Devices 71 R. Alabedra Fluctuations of Optical and Electrical Parameters and Their Correlation of Multiple-Quantum-Well INGAAS/INP Lasers 79 S. Pralgauskaitơ, V. Palenskis and J. Matukas VI Microwave Noise and Fast/Ultrafast Electronic Processes in Nitride 2DEG Channels 89 A. Matulionis Noise of High Temperature Superconducting Bolometers 97 I.A. Khrebtov 1/f Noise in MOSTs: Faster is Noisier 109 L.K.J. Vandamme Experimental Assessment of Quantum Effects in the Low- Frequency Noise and RTS of Deep Submicron MOSFETs 121 E. Simoen, A. Mercha and C. Claeys Noise and Tunneling Through the 2.5 nm Gate Oxide in SOI MOSFETs 129 N. Lukyanchikova, E. Simoen, A. Mercha and C. Claeys Low Frequency Noise Studies of Si Nano-Crystal Effects in MOS Transistors and Capacitors 137 S. Ferraton, L. Montès, I. Ionica, J. Zimmermann, and J. A. Chroboczek Noise Modelling in Low Dimensional Electronic Structures 145 L. Reggiani, V. Ya. Aleshkin and A. Reklaitis Correlation Noise Measurements and Modeling of Nanoscale MOSFETs 153 J. Lee and G. Bosman Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs 161 M. Levinshtein, S. Rumyantsev and M. S. Shur High Frequency Noise Sources Extraction in Nanometique MOSFETs 169 F. Danneville, G. Pailloncy and G. Dambrine Informative “Passport Data” of Surface Nano- and Microstructures 177 S. F. Timashev, A. B. Solovieva and G. V. Vstovsky VII III. Noise Measurement Technique Noise Measurement Techniques 189 L.K.J. Vandamme Techniques for High-Sensitivity Measurements of Shot Noise in Nanostructures 203 B.Pellegrini, G. Basso and M. Macucci Correlation Spectrum Analyzer: Principles and Limits in Noise Measurements 211 G. Ferrari and M. Sampietro Measurement and Analysis Methods for Random Telegraph Signals 219 Z. Çelik-Butler RTS In Quantum Dots and MOSFETs: Experimental Set-Up with Long-Time Stability and Magnetic Field Compensation 227 J. Sikula, J. Pavelka, M. Tacano, S. Hashiguchi and M. Toita Some Considerations for the Construction of Low-Noise Amplifiers in Very Low Frequency Region 237 J. Sikula, S. Hashiguchi, M. Ohki and M. Tacano Measurements of Low Frequency Noise in Nano-Grained RuO 2 +Glass Films Below 1 K 245 A. Kolek Technique for Investigation of Non-Gaussian and Non-Stationary Properties of LF Noise in Nanoscale Semiconductor Devices 253 A. Yakimov, A. Belyakov, S. Medvedev, A. Moryashin and M. Perov The Noise Background Suppression of Noise Measuring Set-Up 261 P. Hruska and K. Hajek Accuracy of Noise Measurements for 1/f and GR Noise 271 I. SlaidiƼš Radiofrequency and Microwave Noise Metrology 279 E. Rubiola and V. Giordano VIII Treatment of Noise Data in Laplace Plane 287 B. M. Grafov Measurement of Noise Parameter Set in the Low Frequency Range: Requirements and Instrumentation 293 L. Hasse Techniques of Interference Reduction in Probe System for Wafer Level Noise Measurements of Submicron Semiconductor Devices 303 L. Spiralski, A. Szewczyk and L. Hasse Hooge Mobility Fluctuations in n-InSb Magnetoresistors as a Reference for Access Resistance LF−Noise Measurements of SiGe Metamorphic HMOS FETs 311 S. Durov, O.A. Mironov, M. Myronov, T.E. Whall, V.T. Igumenov, V.M. Konstantinov and V.V. Paramonov Optimised Preamplifier for LF-Noise MOSFET Characterization 319 S. Durov and O.A. Mironov Net of YBCO and LSMO Thermometers for Bolometric Applications 327 B. Guillet, L Méchin, F. Yang, J.M. Routoure, G. Le Dem, C. Gunther, D. Robbes and R.A. Chakalov Diagnostics of GaAs Light Emitting Diode pn Junctions 337 P. Koktavy and B. Koktavy New Tools for Fast and Sensitive Noise Measurements 345 J. Sikula, M. Tacano, S. Yokokura and S. Hashiguchi Using a Novel, Computer Controlled Automatic System for LF Noise Measurements under Point Probes 355 J.A. Chroboczek, S. Ferraton and G. Piantino AUTHOR INDEX 363 SUBJECT INDEX 365 IX PREFACE The NATO Advanced Research Workshop “Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices” was held in Brno, the Czech Republic, from 14 to 16 August, 2003, being the first event to be held in this country. The Workshop passed off before the 17 th International Conference on Noise and Fluctuations – ICNF 2003 that took place at the Charles University Conference Centre, Prague, Czech Republic, from 18 to 22 August, 2003. The Workshop provided a forum for discussion on recently developed experimental methods for noise research in nanoscale electronic devices. It brought together specialists in the area of transport and stochastic phenomena in nanoscale physics, dealing with systems for future nanoscale electronics. The approach was to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage - current and thermal dependences. The present knowledge of measurement methods for mesoscopic devices was summarized, to identify directions for future research, related to downscaling effects. The directions for future research of fluctuation phenomena in quantum dot and quantum wire devices were specified. Another approach was to emphasize the fact, that nanoscale electronic devices will be the basic components for electronics of the 21 st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future. This ARW promoted and improved links between scientists from NATO and Partner countries and helped also to strengthen the scientific communities in the new NATO countries. The workshop linked the theoretical assessment of the phenomenon of noise with a discussion of the advanced experimental methods. Its main idea was to discuss new results in nanoscale physics and initiate new joint research programmes. The Workshop was international in scope and included authors from Belgium, Czech Republic, France, German, Italy, Latvia, Lithuania, the Netherlands, Poland, Portugal, Romania, Russia, Slovak Republic, Ukraine, United Kingdom, the United States and Uzbekistan. This Book contains 41 papers providing reviews and recent advances related to noise research in nanoscale electronic devices. The organizers of the ARW gratefully acknowledge the financial support by the NATO Scientific Committee, Brno University of Technology and VS Technology Brno. Brno, August 2003 Josef Sikula I. NOISE SOURCES [...]... to the nanostructures processing signals Moreover, below some thresholds, one can encounter intrinsic noise levels comparable with the 19 J Sikula and M Levinshtein (eds.), Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices (19-27) © 2004 Kluwer Academic Publisher Printed in the Netherlands 20 signal these nanostructures have to process In principle, one can alleviate these... sources of noise, including contacts, surface and 2D channel itself 2 Experimental details The GaN/AlGaN heterostructures were grown by metalorganic chemical vapor deposition (MOCVD) on a semi-insulating 4H-SiC substrate 11 J Sikula and M Levinshtein (eds.), Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices (11 - 18) © 2004 Kluwer Academic Publisher Printed in the Netherlands... prove that here the McWhorter model does not apply The 1/f noise turns out to be in the mobility and not in the number of the elections as the result from GR 3 J Sikula and M Levinshtein (eds.), Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices (3 - 10) © 2004 Kluwer Academic Publisher Printed in the Netherlands 4 noise Whether the McWhorter model does apply to MOSTs, still... contact noise from (1) which holds for bulk 1/f noise Normal α values are experimentally found So contact noise is bulk 1/f noise 6 2.2 Grainy layers In grainy layers there are many point contacts between the grains Estimates of the number of contacts and their individual contribution to the noise lead to a relation like (1) with Neff . Workshop provided a forum for discussion on recently developed experimental methods for noise research in nanoscale electronic devices. It brought together specialists in the area of transport. the advanced experimental methods. Its main idea was to discuss new results in nanoscale physics and initiate new joint research programmes. The Workshop was international in scope and included. I. NOISE SOURCES 3 J. Sikula and M. Levinshtein (eds.), Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices (3 - 10) © 2004 Kluwer Academic Publisher. Printed in