1. Trang chủ
  2. » Khoa Học Tự Nhiên

emerging nanotechnologies. test, defect tolerance, and reliability, 2008, p.411

411 234 0

Đang tải... (xem toàn văn)

Tài liệu hạn chế xem trước, để xem đầy đủ mời bạn chọn Tải xuống

THÔNG TIN TÀI LIỆU

Thông tin cơ bản

Định dạng
Số trang 411
Dung lượng 8,81 MB

Nội dung

[...]... present novel methods of test and defect tolerance for such high defect density nano-devices The proposed methods try to alleviate problems such as (1) defect identification, localization and isolation, (2) defect map generation and defect avoidance, (3) test under very high defect rates, and (4) design flow under high defect rates condition The first chapter, entitled Defect- Tolerant Logic with Nanoscale... that can be achieved for a given defect density Simulation results are presented for various nanofabric sizes, different defect densities, and for random and clustered defects The third chapter entitled “Test and Defect Tolerance for Reconfigurable Nanoscale Devices” presents a solution to dealing with issues such as storing large defect map size and per chip placement and routing In this chapter, the... pullup and 16 T Hogg and G Snider pullup crossbar AND crossbar OR crossbar inputs outputs pulldown crossbar Fig 9 Model of diode array as a set of four connected crossbars The AND and OR crossbars have configurable diode junctions, while the pullup and pulldown crossbars have configurable resistor junctions Any junction in any crossbar may be defective, though the defect rate for junctions in the pullup and. .. junctions between the nanowires and much larger, microscale, wires Thus the junction area per device is significantly larger than that for the diode junctions used in the AND and OR crossbars This increased junction area means the chance of a defective resistor is far smaller than having a defective diode Even though the AND and OR crossbars share the same junction type and could be represented with a... particularly defects Creating such circuits in spite of fabrication defects requires economic trade-offs For instance, accepting lower yields or improving fabrication could reduce defect rates, but increase production cost Algorithmic configuration strategies for defect- tolerant systems [28], discussed in this chapter, provide higher defect tolerance, but add to manufacturing cost with the additional testing and. .. implemented and can also result in longer runtimes for the compiler to identify a way to implement the circuit while avoiding the defects Furthermore, a logical formula can be written in various logically equivalent forms, e.g., (a OR b) AND c (a AND c) OR (b AND c) are logically equivalent These rewrites can involve different numbers of terms, and hence require different crossbar areas and shapes to... logical AND of k inputs One implementation is as a single k-input AND gate, i.e., using k connections to a single output wire Another implementation is to decompose 10 T Hogg and G Snider (a) (b) output output output output Fig 4 Logic gates: a 4-input AND, and the same function using 2-input AND gates Also shown is an implementation of these circuits using parts of a crossbar network the AND into... circuits for memory and logic applications However, currently feasible manufacturing technologies for molecular electronics introduce numerous defects so insisting on defect- free crossbars would give unacceptably low yields Conventional test and defect tolerance methods employed for CMOS reconfigurable devices such as FPGA are not applicable to emerging nanoscale devices due mainly to the high defect rates... novel defect avoidance methods for reconfigurable nanoscale crossbar-based devices The proposed defect tolerance methods are independent on defect map and avoid per chip placement and routing The test procedure proposed in this chapter is a builtin self-test method that tests the function implemented on a logic block instead of testing the block itself The method avoids generation of large defect map and. .. representing the desired circuit and compound crossbars; and (2) searching for an embedding or monomorphism between the circuit graph and the compound crossbar graph t u v t u v x t u v t u v x y z z perfect crossbar y x y z x y z defective crossbar Fig 10 Representing a crossbar with a graph Wires and junctions in the crossbar correspond to nodes and edges of the graph, respectively Defective junctions are . crossbar-based devices. The proposed defect tolerance methods are independent on defect map and avoid per chip placement and routing. The test procedure proposed in this chapter is a built- in self-test. a final mapping step is required to be defect- aware. Application independence of Section 1: Test and Defect Tolerance for Crossbar-Based Architectures 3 this flow minimizes the amount of per chip design. alleviate problems such as (1) defect identification, localization and isolation, (2) defect map generation and defect avoidance, (3) test under very high defect rates, and (4) design flow under high defect

Ngày đăng: 04/06/2014, 14:44

Nguồn tham khảo

Tài liệu tham khảo Loại Chi tiết
1. G. K. Celler and S. Cristoloveanu. Frontiers of silicon-on-insulator. Journal of Applied Physics, 93:4955–4978, 2003 Sách, tạp chí
Tiêu đề: Frontiers of silicon-on-insulator
Tác giả: G. K. Celler, S. Cristoloveanu
Nhà XB: Journal of Applied Physics
Năm: 2003
2. S. Luryi, J. M. Xu, and A. Zaslavsky, eds. Future Trends in Microelectronics:The Nano, the Giga, and the Ultra. New York: Wiley, 2004 Sách, tạp chí
Tiêu đề: Future Trends in Microelectronics:The Nano, the Giga, and the Ultra
Tác giả: S. Luryi, J. M. Xu, A. Zaslavsky
Nhà XB: Wiley
Năm: 2004
3. H. S. P. Wong. Beyond the conventional transistor. IBM Journal of Research and Development, 46(2-3):133–168, 2002 Sách, tạp chí
Tiêu đề: IBM Journal of Research"and Development
4. H. Iwai. The future of CMOS downscaling, paper in: S. Luryi, J. M. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, pages 23–33. Wiley, New York, 2004 Sách, tạp chí
Tiêu đề: Future Trends in Microelectronics: The Nano, the Giga, and the Ultra
Tác giả: H. Iwai
Nhà XB: Wiley
Năm: 2004
6. J. Besag. Spatial interaction and the statistical analysis of lattice systems. Jour- nal of the Royal Statistical Society, Series B, 36(3):192–236, 1994 Sách, tạp chí
Tiêu đề: Jour-"nal of the Royal Statistical Society, Series B
7. S. Z. Li. Markov Random Field Modeling in Computer Vision. Berlin Heidelberg Newyork: Springer, 1995 Sách, tạp chí
Tiêu đề: Markov Random Field Modeling in Computer Vision
8. R. Chellappa. Markov Random Fields: Theory and Applications. New York:Academic, 1993 Sách, tạp chí
Tiêu đề: Markov Random Fields: Theory and Applications
9. J. Pearl. Probabilistic reasoning in intelligent systems: networks of plausible inference. San Francisco, CA: Morgan Kaufmann Publishers, 1988 Sách, tạp chí
Tiêu đề: Probabilistic reasoning in intelligent systems: networks of plausible"inference
10. J. Yedidia, W. Freeman, and Y. Weiss. Understanding belief propagation and its generalizations. In International Joint Conference on AI, 2001. Distinguished Lecture Sách, tạp chí
Tiêu đề: Understanding belief propagation and its generalizations
Tác giả: J. Yedidia, W. Freeman, Y. Weiss
Nhà XB: International Joint Conference on AI
Năm: 2001
11. R. I. Bahar, J. Mundy, and J. Chen. A probabilistic-based design methodol- ogy for nanoscale computation. In Proceedings of International Conference on Computer Aided Design, November 2003 Sách, tạp chí
Tiêu đề: Proceedings of International Conference on"Computer Aided Design
12. K. K. Likharev. Single-electron devices and their applications. Proceedings of the IEEE, 87(4):606–632, April 1999 Sách, tạp chí
Tiêu đề: Proceedings of"the IEEE
13. K. Nepal, R. I. Bahar, J. Mundy, W. R. Patterson, and A. Zaslavsky. Designing logic circuits for probabilistic computation in the presence of noise. In Proceed- ings of Design Automation Conference, June 2005 Sách, tạp chí
Tiêu đề: Proceed-"ings of Design Automation Conference
15. V. M. Polyakov and F. Schwierz. Excessive noise in nanoscaled double-gate mosfets: A monte carlo study. Journal of Semiconductor Science and Technology, 19(4):145–147, 2004 Sách, tạp chí
Tiêu đề: Excessive noise in nanoscaled double-gate mosfets: A monte carlo study
Tác giả: V. M. Polyakov, F. Schwierz
Nhà XB: Journal of Semiconductor Science and Technology
Năm: 2004
16. S. Narendra, V. De, S. Borkar, D. A. Antoniadis, and A. P. Chandrakasan.Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18 àm cmos. IEEE Journal Of Solid-State Circuits, 39:501–510, March 2004 Sách, tạp chí
Tiêu đề: Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18 àm cmos
Tác giả: S. Narendra, V. De, S. Borkar, D. A. Antoniadis, A. P. Chandrakasan
Nhà XB: IEEE Journal Of Solid-State Circuits
Năm: 2004
17. R. Sarpeshkar, T. Delbrueck, and C. A. Mead. White noise in mos transistors and resistors. IEEE Circuits and Devices Magazine, 6:23–29, November 1993 Sách, tạp chí
Tiêu đề: IEEE Circuits and Devices Magazine
18. H. Li, J. Mundy, W. R. Patterson, D. Kazazis, A. Zaslavsky, and R. I. Bahar.A model for soft errors in the subthreshold cmos inverter. In Proceedings of Workshop on System Effects of Logic Soft Errors, November 2006 Sách, tạp chí
Tiêu đề: A model for soft errors in the subthreshold cmos inverter
Tác giả: H. Li, J. Mundy, W. R. Patterson, D. Kazazis, A. Zaslavsky, R. I. Bahar
Nhà XB: Proceedings of Workshop on System Effects of Logic Soft Errors
Năm: 2006
19. E. Suzuki, K. Ishii, S. Kanemaru, T. Maeda, T. Tsutsumi, T. Sekigawa, K. Nagai, and H. Hiroshima. Highly suppressed short-channel effects in ul- trathin soi n-mosfets. IEEE Transactions on Electron Devices, 47(2):354–359, February 2000 Sách, tạp chí
Tiêu đề: Highly suppressed short-channel effects in ultrathin soi n-mosfets
Tác giả: E. Suzuki, K. Ishii, S. Kanemaru, T. Maeda, T. Tsutsumi, T. Sekigawa, K. Nagai, H. Hiroshima
Nhà XB: IEEE Transactions on Electron Devices
Năm: 2000
20. T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase. Ultimately thin double-gate soi mosfets. IEEE Transactions on Electron Devices, 50:830–838, March 2003 Sách, tạp chí
Tiêu đề: IEEE"Transactions on Electron Devices
5. International Technology Roadmap for Semiconductors. The latest update is at http://www.public.itrs.net Link
14. Berkeley Predictive Technology Model. Available at http://www-device.eecs.berkeley.edu/ ∼ ptm/ Link