| Tài liệu tham khảo |
Loại |
Chi tiết |
| [1] O. Schultz, A. Mette, M. Hermle, and S.W. Schultz, "Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology," Prog. Photovoltaics, vol. 16, pp. 317, 2008 |
Sách, tạp chí |
| Tiêu đề: |
Thermal oxidation forcrystalline silicon solar cells exceeding 19% efficiency applying industriallyfeasible process technology |
|
| [2] P.P. Altermatt, "Models for numerical device simulations of crystalline silicon solar cells—a review," Journal of Computational Electronics, vol. 10, pp.314–330, 2011 |
Sách, tạp chí |
| Tiêu đề: |
Models for numerical device simulations of crystalline siliconsolar cells—a review |
|
| [3] C.W. Gwyn, D.L. Scharfetter, and J.L. Wirth, "The Analysis of Radiation Effects in Semiconductor Junction Devices," , IEEE Transactions on Nuclear Science, vol. 14, pp. 153-169, Dec. 1967 |
Sách, tạp chí |
| Tiêu đề: |
The Analysis of RadiationEffects in Semiconductor Junction Devices |
|
| [4] Fossum, "Computer-aided numerical analysis of silicon solar cells," Solid- State Electronics vol. 19, pp. 269-277, 1976 |
Sách, tạp chí |
| Tiêu đề: |
Computer-aided numerical analysis of silicon solar cells |
| Tác giả: |
Fossum |
| Nhà XB: |
Solid- State Electronics |
| Năm: |
1976 |
|
| [5] J.G. Fossum, "Physical operation of back-surface-field silicon solar cells,"Electron Devices, IEEE Transactions on, vol. 24, pp. 322-325, Apr. 1977 |
Sách, tạp chí |
| Tiêu đề: |
Physical operation of back-surface-field silicon solar cells |
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| [6] J.R. Hauser, P.M. Dunbar, "Performance limitations of silicon solar cells,"Electron Devices, IEEE Transactions on, vol. 24, pp. 305-312, Apr. 1977 |
Sách, tạp chí |
| Tiêu đề: |
Performance limitations of silicon solar cells |
|
| [7] R.J. Schwartz, M.S. Lundstrom, R. Nasby, "The degradation of high-intensity BSF solar-cell fill factors due to a loss of base conductivity modulation,"Electron Devices, IEEE Transactions on, vol. 28, pp. 264-269, Mar. 1981 |
Sách, tạp chí |
| Tiêu đề: |
The degradation of high-intensityBSF solar-cell fill factors due to a loss of base conductivity modulation |
|
| [9] M. Zanuccoli, R. De Rose, P. Magnone, M. Frei, H. Gui, M. Agrawal, E.Sangiorgi, and C. Fiegna, "Numerical Simulation and Modeling of Rear Point Contact Solar Cells," in Proc. 37th PVSC IEEE, 2011, pp. 1519-1523 |
Sách, tạp chí |
| Tiêu đề: |
Numerical Simulation and Modeling of Rear PointContact Solar Cells |
|
| [10] M. Zanuccoli, R.D. Rose, P. Magnone, E. Sangiorgi, and C. Fiegna, "Per- formance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation," IEEE Transactions On Electron Devices, vol. 59, no.5 pp. 1311–1319, May 2012 |
Sách, tạp chí |
| Tiêu đề: |
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation |
| Tác giả: |
M. Zanuccoli, R.D. Rose, P. Magnone, E. Sangiorgi, C. Fiegna |
| Nhà XB: |
IEEE Transactions On Electron Devices |
| Năm: |
2012 |
|
| [11] M. Zanuccoli, "Advanced numerical simulation of silicon-based solar cells,"Università di Bologna, 2012 |
Sách, tạp chí |
| Tiêu đề: |
Advanced numerical simulation of silicon-based solar cells |
| Tác giả: |
M. Zanuccoli |
| Nhà XB: |
Università di Bologna |
| Năm: |
2012 |
|
| [12] K. Ishaque, Z. Salam, Syafaruddin, "A comprehensive MATLAB Simulink PV system simulator with partial shading capability based on two-diode model," Solar Energy, vol. 85, pp. 2217–2227, 2011 |
Sách, tạp chí |
| Tiêu đề: |
A comprehensive MATLAB SimulinkPV system simulator with partial shading capability based on two-diodemodel |
|
| [13] G. Bhuvaneswari and R. Annamalai, "Development Of A Solar Cell Model In Matlab For PV Based Generation System", India Conference (INDICON), 2011 Annual IEEE, pp. 1-5 |
Sách, tạp chí |
| Tiêu đề: |
Development Of A Solar Cell ModelIn Matlab For PV Based Generation System |
|
| [14] S. W. Glunz, "High-Efficiency Crystalline Silicon Solar Cells," Advances in OptoElectronics, vol. 2007, pp. 1-7, Jul. 2007 |
Sách, tạp chí |
| Tiêu đề: |
High-Efficiency Crystalline Silicon Solar Cells |
|
| [15] A.G. Aberle, G. Heiser, and M.A. Green, "Two dimensional numerical op- timization study of the rear contact geometry of high efficiency silicon solar cells," J. Appl. Phys., vol. 75, pp. 5391–5405, May 1994 |
Sách, tạp chí |
| Tiêu đề: |
Two dimensional numerical optimization study of the rear contact geometry of high efficiency silicon solar cells |
| Tác giả: |
A.G. Aberle, G. Heiser, M.A. Green |
| Nhà XB: |
J. Appl. Phys. |
| Năm: |
1994 |
|
| [16] K. Kotsovos and K. Misiakos, "Three-dimensional simulation of carrier transport effects in the base of rear point contact silicon solar cells," J. Appl.Phys., vol. 89, pp. 2491–2496, Feb. 2001 |
Sách, tạp chí |
| Tiêu đề: |
Three-dimensional simulation of carrier transport effects in the base of rear point contact silicon solar cells |
| Tác giả: |
K. Kotsovos, K. Misiakos |
| Nhà XB: |
J. Appl.Phys. |
| Năm: |
2001 |
|
| [17] K. Kotsovos and K. Misiakos, "Base limited carrier transport and perfor- mance of double junction rear point contact silicon solar cell," Solar Energy& Solar Cells, vol. 77, pp. 209–227, 2003 |
Sách, tạp chí |
| Tiêu đề: |
Base limited carrier transport and perfor- mance of double junction rear point contact silicon solar cell |
| Tác giả: |
K. Kotsovos, K. Misiakos |
| Nhà XB: |
Solar Energy & Solar Cells |
| Năm: |
2003 |
|
| [18] B. Min, U.A. Yusufoglu, T.M. Pletzer, and N. Koo, "3D Simulation Study of Rear Point Contact Solar Cells with a Thickness of 100 Micron," in Proc.27th EU PVSEC, Frankfurt, Germany, 2012, pp. 1265-1267 |
Sách, tạp chí |
| Tiêu đề: |
3D Simulation Studyof Rear Point Contact Solar Cells with a Thickness of 100 Micron |
|
| [19] B. Fischer, "Loss Analysis Of Crystalline Silicon Solar Cells Using Photo- conductance And Quantum Efficiency Measurements," Ph.D Thesis, Univer- sity of Konstanz, 2003 |
Sách, tạp chí |
| Tiêu đề: |
Loss Analysis Of Crystalline Silicon Solar Cells Using Photo- conductance And Quantum Efficiency Measurements |
| Tác giả: |
B. Fischer |
| Nhà XB: |
University of Konstanz |
| Năm: |
2003 |
|
| [20] H. Plagwitz and R. Brendel, "Analytical model for the diode saturation current of point-contacted solar cells," Prog. Photovolt: Res. Appl., vol 14, pp. 1-4, 2006 |
Sách, tạp chí |
| Tiêu đề: |
Analytical model for the diode saturation current of point-contacted solar cells |
| Tác giả: |
H. Plagwitz, R. Brendel |
| Nhà XB: |
Prog. Photovolt: Res. Appl. |
| Năm: |
2006 |
|
| [21] P. Saint-Cast, M. R¨ udiger, A. Wolf, M. Hofmann, and J. Rentsch, "Ad- vanced analytical model for the effective recombination velocity of locally contacted surfaces," J. Appl. Phys., vol. 108, pp. 013705, Jul. 2010 |
Sách, tạp chí |
| Tiêu đề: |
Advanced analytical model for the effective recombination velocity of locally contacted surfaces |
| Tác giả: |
P. Saint-Cast, M. Rüdiger, A. Wolf, M. Hofmann, J. Rentsch |
| Nhà XB: |
J. Appl. Phys. |
| Năm: |
2010 |
|